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HAT2027R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-458 B (Z) 3rd. Edition December. 1996 Features
* * * * Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP-8
8 5 76
3 12 78 DD 56 DD
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT2027R
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 Ratings 20 12 7 56 7 2 3 150 -55 to +150 Unit V V A A A W W C C
Body-drain diode reverse drain current IDR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Note2 Pch Note3 Tch Tstg
1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current IGSS IDSS -- -- 0.5 -- -- 9 -- -- -- -- -- -- -- -- -- -- -- 0.03 0.038 14 720 450 185 28 145 100 125 0.9 10 10 1.5 0.038 0.053 -- -- -- -- -- -- -- -- 1.4 A A V S pF pF pF ns ns ns ns V IF = 7A, VGS = 0 Note4 VGS = 10V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10V, I D = 1mA ID = 4A, VGS = 4V Note4 ID = 4A, VGS = 2.5V Note4 ID = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 4A VDD A 10V V(BR)GSS 12 -- -- V IG = 100 A, VDS = 0 Symbol Min Typ -- Max -- Unit V Test Conditions ID = 10mA, VGS = 0 V(BR)DSS 20
Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage td(on) tr td(off) tf VDF
HAT2027R
Body-drain diode reverse recovery time Note: 4. Pulse test trr -- 60 -- ns IF = 7A, VGS = 0 diF/ dt =20A/s
HAT2027R
Main Characteristics
Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0
100
Maximum Safe Operation Area
10 s 100 s
Pch (W)
I D (A)
30 10 3
DC
PW
Op er at ion
1m
=
s
10
Channel Dissipation
Drain Current
ms
2 ive Dr
2.0
1
(P
W
1
1.0
Dr
ive
Op
er
Operation in 0.3 this area is limited by R DS(on) 0.1 0.03 Ta = 25 C 1 shot Pulse
< Note 10 5 s)
Op
at
at er
ion
150 Ta (C) 200
ion
0
50
100
Ambient Temperature
0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics 50 10V 6V 5V 4.5 V Pulse Test 50
Typical Transfer Characteristics V DS = 10 V Pulse Test -25C 30 25C Tc = 75C
I D (A)
30 3V 20 2.5 V 10 2V VGS = 1.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
Drain Current
Drain Current
ID
3.5 V
(A)
40
4V
40
20
10
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
HAT2027R
Drain to Source Saturation Voltage vs. Gate to Source Voltage
V DS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance R DS(on) ( )
0.5
0.5
Pulse Test
Pulse Test
0.2 0.1
0.4
Drain to Source Voltage
0.3
0.05
VGS = 2.5 V 4V
0.2 ID=5A 0.1 2A 1A 2 4 6 Gate to Source Voltage 8 V GS (V) 10
0.02 0.01
0.005
0
0.2
0.5 1 2 Drain Current
5 10 I D (A)
20
Static Drain to Source on State Resistance R DS(on) ( )
Pulse Test 0.08 I D = 1 A, 2 A, 5 A 0.06 V GS = 2.5 V 0.04 1 A, 2 A, 5 A 0.02 0 -40 4V
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.10
50
Forward Transfer Admittance vs. Drain Current Tc = -25 C
20 10 5 2 1 0.5 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 25 C
75 C
0 40 80 120 160 Case Temperature Tc (C)
HAT2027R
Body-Drain Diode Reverse Recovery Time 10000 3000 1000 300 Crss 100 30 10 0 4 8 12 16 20 Drain to Source Voltage V DS (V) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50
Ciss Coss
20 10 di/dt = 20 A/s V GS = 0, Ta = 25C
5 0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A)
Dynamic Input Characteristics
V DS (V)
I D= 7 A 40 V DD = 5 V 10 V 20 V V DS V GS V DD = 20 V 10 V 5V 4 8 12 16 Gate Charge Qg (nc) 8
V GS (V)
50
10
500 200 100
Switching Characteristics
Switching Time t (ns)
tr tf t d(off)
Drain to Source Voltage
30
6
Gate to Source Voltage
50 t d(on) 20 10 5 0.2 V GS = 4 V, V DD = 10 V PW = 3 s, duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20
20
4
10
2 0 20
0
HAT2027R
Reverse Drain Current vs. Souece to Drain Voltage 50 Pulse Test Reverse Drain Current I DR (A) 40 V GS = 5 V 0, -5 V 20
30
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1 0.05
0.02 0.01
0.01
ch - f(t) = s (t) * ch - f ch - f = 125 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
ls pu e
PDM PW T
0.001
1s ho t
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
HAT2027R
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1 0.05
0.02 0.01
0.01
ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
ls pu e
PDM PW T
0.001
1s ho t
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
HAT2027R
Package Dimensions
Unit: mm
5.0 Max 8 5
1
4
4.0 Max
1.75 Max
6.2 Max 0.25 Max
0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max
0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA

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